Exploratory research on the III-Sb technology

Besides its established programs, nanoMIR performs also more fundamental studies to explore the full potential of the III-Sb technology. We give below a few examples of recent topics.

Electrically-pumped Optical Parametric Oscillation

Staff: E. Tournié, L. Cerutti

PhD student: S. Roux (CIFRE Thales Research and Technology, France, 2013 – 2016)

Collaborations: A. Grisard, Thales-research and Technology France, and B. Gérard, III-V lab, Palaiseau (France)

The project aims at the highly ambitious demonstration of electrically-pumped optical parametric oscillation in orientation-patterned III-Sb waveguides thanks to GaSb laser diodes co-integrated with Orientation-Patterned-GaSb waveguides. The joint implementation of III-Sb active structures emitting in the 2.0 – 2.5 µm wavelength range and of OP-GaSb waveguides efficiently converting this pump in the 2.5 – 12 µm wavelength range will offer a perfect match toward electrically-pumped monolithic semiconductor lasers sources with an unprecedented tuning capability.

 

Topological phases in InAs/GaSb quantum wells

Staff: E. Tournié, L. Cerutti, F. Gonzalez-Posada, J.B. Rodriguez

Collaborations: F. Teppe, L2C, Montpellier (France).

Surface states in semiconducting and insulating materials are usually fragile with respect to disorder and perturbations such as impurity scattering and many-body interactions. However, there are systems in which surface states are robust due to the non-trivial topology of the band structure. Recently, broken gap InAs/GaSb quantum wells have shown a topological insulating phase robust even to strong magnetic fields. We collaborate with our colleagues from L2C to investigate these phases.

 

Novel diagnostic tools for nano-characterization of photonic devices

Staff: R. Arinero, A.N. Baranov

Collaborations: M. Dunaevskiy, P. Alexeev, Ioffe Institute (Russia)

We develop near field optical imaging by scanning probe microscopy in which the probe itself serves as an infrared photodetector. The method is based on the detection of a shift of the probe resonance related to its heating by absorbed IR radiation. The optical power of operating mid-IR semiconductor lasers can be studied with a submicron spatial resolution. The method does not require an apertured probe and can be realized with a conventional silicon probe used in atomic force microscopy. The method is employed, for example, for the visualization of infrared emission from a half-disk semiconductor whispering gallery mode laser.

This work is proceeding within the framework of the International Laboratory ILNACS jointly operated by the National Center for Scientific Research (CNRS, France) and the Russian Academy of Science.

 

Mid-IR photonic devices for system on-chip applications.

Staff: A.N. Baranov, R. Teissier

Collaborations: F. Lozes, O. Gauthier-Lafaye, S. Calvez, A. Monmayrant, LAAS, Toulouse (France)

A. Ramdane, A. Martinez, LPN, Marcoussis (France)

Yu.P. Yakovlev, V.V. Sherstnev, A.M. Monakhov, M.P. Mikhailova, Ioffe Institute (Russia)

We are developing active whispering gallery mode (WGM) devices for system on-chip applications operating in the mid-infrared. WGM lasers with a disk or ring resonator are attractive for use in photonic micro systems due to their small dimensions and possibility of their efficient coupling with planar waveguides. They are also promising for the development of compact high-speed optical and electronic oscillators. 

This work is proceeding within the framework of the International Laboratory ILNACS jointly operated by the National Center for Scientific Research (CNRS, France) and the Russian Academy of Science.