Study of terahertz phenomena using GaN devices

The thesis named "Study of terahertz phenomena using GaN devices" was based on the development of different experimental setups in order to use them to test Gallium Nitride (GaN) components in emission, transmission and detection modes in the electromagnetic range of terahertz (THz).

An emission at 3 THz with a tunable frequency depending on the electric field applied to the GaN quantum well, a variable coefficient of transmission function of the voltage applied to the various GaN devices and a heterodyne radiation detection with a carrier frequency of 0.3 THz and a modulation that can reach up  40 GHz have been demonstrated experimentally.
In addition, each type of experimental results has been explained theoretically using analytical models developed in collaboration with international team.

Soutenance le vendredi 6 décembre 2013 à 14h30 dans la salle de conférence de l’Institut Européen des Membranes

Alexandre PENOT

Doctorant équipe TéHO, Institut d'Electronique du Sud (IES)
Université Montpellier 2 - CC 13002
Place Eugène Bataillon 34095 MONTPELLIER Cedex 05
tel. +33 (0)467143717

 

 

 

 

FaLang translation system by Faboba